A GaAs Schottky-barrier photodiode with high quantum efficiency-bandwidth product using a multilayer reflector
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (2) , 348-352
- https://doi.org/10.1109/16.182512
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- High performance planar GaAs/Al 0.3 Ga 0.7 As Schottky barrier photodetector grown on Si substrates by molecular beam epitaxyElectronics Letters, 1991
- High quantum efficiency, long wavelength InP/InGaAs microcavity photodiodeElectronics Letters, 1991
- Low-voltage high-gain resonant-cavity avalanche photodiodeIEEE Photonics Technology Letters, 1991
- Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collectorApplied Physics Letters, 1990
- Multilayer reflectors by molecular-beam epitaxy for resonance enhanced absorption in thin high-speed detectorsJournal of Vacuum Science & Technology B, 1990
- Ultrawide-band long-wavelength p-i-n photodetectorsJournal of Lightwave Technology, 1987