Average Silicon Neutron Displacement Kerma Factor at 1 MeV
- 1 February 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (1) , 1018-1020
- https://doi.org/10.1109/tns.1982.4336006
Abstract
The average neutron displacement kerma factor in the vicinity of 1 MeV is difficult to derive for silicon because of sharp neutron cross section resonances in that region. To avoid these difficulties, the function AE(1-e-B/E) was fitted to tabulations of D(E) vs. E, where E is energy and D(E) is the neutron displacement kerma factor for silicon at 1 MeV. The values of A and B obtained from a least squares fit yielded an average value at 1 MeV of D-(1 MeV)=95±4 MeV-mb.Keywords
This publication has 6 references indexed in Scilit:
- Threshold-Foil Measurements of Reactor Neutron Spectra for Radiation Damage ApplicationsNuclear Science and Engineering, 1978
- Displacement and Ionization Fractions of Fast Neutron Kerma in TLDS and SiIEEE Transactions on Nuclear Science, 1977
- Silicon Ionization and Displacement Kerma for Neutrons from Thermal to 20 MeVIEEE Transactions on Nuclear Science, 1975
- Preparation of a Standard Technique for Determination of Neutron Equivalence for Bulk Damage in SiliconIEEE Transactions on Nuclear Science, 1972
- Considerations in Establishing a Standard for Neutron Displacement Energy Effects in SemiconductorsIEEE Transactions on Nuclear Science, 1971
- Radiation Effects on MicrocircuitsIEEE Transactions on Nuclear Science, 1966