SiO production from Si(100) and (111) surfaces by reaction with O2 beams
- 1 January 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 260 (1-3) , 44-52
- https://doi.org/10.1016/0039-6028(92)90017-z
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Molecular-beam study of sticking of oxygen on Si(100)Physical Review B, 1990
- SiC film formation on Si(001) by reaction with C2H2 beamsApplied Surface Science, 1990
- Kinetics of the adsorption of O2 and of the desorption of SiO on Si(100): A molecular beam, XPS, and ISS studySurface Science, 1987
- Roughness effect upon oxygen adsorption on Si(100) surfacesJournal of Vacuum Science & Technology A, 1987
- Real-time study of oxygen reaction on Si(100)Physical Review Letters, 1987
- Low temperature oxidation of silicon (111) 7 × 7 surfacesSurface Science, 1985
- Oxidation of the Si(111) (7×7) surface: Electron energy loss spectroscopy, low-energy electron diffraction, and Auger electron spectroscopy studiesThe Journal of Chemical Physics, 1985
- Reactive scattering from solid surfacesSurface Science Reports, 1983
- Reaction probabilities for methane and oxygen on (111) silicon single-crystal surfaces*1Journal of Catalysis, 1968
- Reaction probabilities of oxygen with heated (110)-germanium and (111) and (100)-silicon single-crystalsTransactions of the Faraday Society, 1968