SiC film formation on Si(001) by reaction with C2H2 beams
- 1 October 1990
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 45 (3) , 171-187
- https://doi.org/10.1016/0169-4332(90)90001-g
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Direct determination of absolute monolayer coverages of chemisorbed C2H2 and C2H4 on Si(100)Journal of Applied Physics, 1990
- Surface structure and composition of β- and 6H-SiCSurface Science, 1989
- Acetylene adsorption on Si(111): Molecular orbital theorySurface Science, 1988
- The adsorption and thermal decomposition of acetylene on Si(100) and vicinal Si(100)9°Surface Science, 1987
- Growth mechanism of polycrystalline β-SiC layers on silicon substrateApplied Physics Letters, 1972
- Growth of β-silicon carbide on siliconJournal of Applied Crystallography, 1970
- Growth morphology and crystallographic orientation of β-SiC films formed by chemical conversionThin Solid Films, 1970
- Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal StructureJapanese Journal of Applied Physics, 1966
- Self-Diffusion in Silicon CarbidePhysical Review B, 1966
- Infrared Properties of Cubic Silicon Carbide FilmsPhysical Review B, 1959