Low temperature oxidation of silicon (111) 7 × 7 surfaces
- 2 July 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 157 (2-3) , 273-296
- https://doi.org/10.1016/0039-6028(85)90673-9
Abstract
No abstract availableThis publication has 80 references indexed in Scilit:
- Oxygen chemisorption and oxide formation on Si(111) and Si(100) surfacesJournal of Vacuum Science & Technology A, 1983
- Possible oxygen chemisorption configurations on the Si(lll) 2×1 surfaceJournal of Vacuum Science and Technology, 1981
- Oxidation of Si(111), 7×7 and 2×1: A comparisonJournal of Vacuum Science and Technology, 1981
- Evidence of SiO at the Si-oxide interface by surface soft X-ray absorption near edge spectroscopySurface Science, 1980
- Observation of changes in the electronic density of states at a Si (111) surface during adsorption of oxygen by Auger electron spectroscopyApplied Physics Letters, 1979
- Electron-spectroscopic studies of the early stages of the oxidation of SiPhysical Review B, 1979
- Abstract: Bonding states of oxygen on siliconJournal of Vacuum Science and Technology, 1978
- Photoemission studies of the surface states and oxidation of group IV semiconductorsJournal of Vacuum Science and Technology, 1977
- Oxidation of silicon: New electron spectroscopy resultsSolid State Communications, 1976
- X-ray photoelectron spectroscopy of thermally grown silicon dioxide films on siliconChemical Physics Letters, 1975