Study of two-dimensional gas transport properties: An approach to electron transport in TEGFETs
- 31 March 1985
- journal article
- Published by Elsevier in Physica B+C
- Vol. 129 (1-3) , 385-389
- https://doi.org/10.1016/0378-4363(85)90607-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Field ionised impurity scattering in an AlGaAs/GaAs two-dimensional electron gasElectronics Letters, 1983
- Differential negative resistance caused by inter-subband scattering in a 2-dimensional electron gasSolid State Communications, 1983
- Polar optic phonon scattering of two dimensional electron gas in a rectangular potential wellSolid State Communications, 1981
- Two-dimensional electron transport in semiconductor layers II: ScreeningJournal of Vacuum Science and Technology, 1981
- Transport properties in GaAs-Al
x
Ga
1−
x
As heterostructures and MESFET applicationElectronics Letters, 1981
- Two-dimensional electron transport in semiconductor layers. I. Phonon scatteringAnnals of Physics, 1981
- Monte Carlo calculation of microwave and far-infrared hot-carrier mobility in N-Si: Efficiency of millimeter transit-time oscillatorsJournal of Applied Physics, 1978
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Temperature Dependence of the Transport Properties of Gallium Arsenide Determined by a Monte Carlo MethodJournal of Applied Physics, 1970