Effects of hydrogen and deposition pressure on Si1−xGex growth rate
- 10 February 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (6) , 707-709
- https://doi.org/10.1063/1.106544
Abstract
Si1−xGex films were deposited at 620 °C by very low pressure chemical vapor deposition. The effects of H2 dilution and deposition pressure on Si1−xGex growth rate were examined. Under the conditions employed here, both H2 dilution and deposition pressure were found to affect the growth rate and its peak as a function of Ge incorporation in the film. The suppression of Si1−xGex growth rate from H2 at low Ge contents was observed. The growth rate enhancement by increasing deposition pressure is dependent on Ge content and becomes more significant as Ge increases. The implications of these observations for Si1−xGex growth rate are discussed.Keywords
This publication has 9 references indexed in Scilit:
- Temperature dependence of Si1−xGex epitaxial growth using very low pressure chemical vapor depositionApplied Physics Letters, 1991
- Kinetics of silicon-germanium deposition by atmospheric-pressure chemical vapor depositionApplied Physics Letters, 1991
- Kinetics of surface reactions in very low-pressure chemical vapor deposition of Si from SiH4Applied Physics Letters, 1991
- A model for heterogeneous growth of Si1−xGex films from hydridesJournal of Applied Physics, 1991
- Temperature dependence of growth of GexSi1−x by ultrahigh vacuum chemical vapor depositionApplied Physics Letters, 1990
- Silicon vapor phase epitaxial growth catalysis by the presence of germaneApplied Physics Letters, 1990
- Limited reaction processing: Growth of Si1−Ge /Si for heterojunction bipolar transistor applicationsThin Solid Films, 1990
- Cooperative growth phenomena in silicon/germanium low-temperature epitaxyApplied Physics Letters, 1988
- Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial silicon deposition. I. Process considerationsJournal of Applied Physics, 1987