Temperature dependence of Si1−xGex epitaxial growth using very low pressure chemical vapor deposition
- 9 December 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (24) , 3162-3164
- https://doi.org/10.1063/1.106399
Abstract
We report measured Ge contents and growth rates for Si1−xGex films grown by very low pressure chemical vapor deposition between 570–700 °C. The ratio of Ge/Si was found to increase linearly with increasing the ratio of GeH4 flow rate to SiH4 flow rate. The nonlinear Arrhenius behavior of growth rate as a function of Ge fraction suggests that Ge enhances hydrogen desorption and modifies the activation energy for Si1−xGex growth. The growth rates of Si1−xGex show different dependencies on Ge content at different temperatures. The growth rate decreases with increasing Ge content at 700 °C, but increases monotonically with Ge at 570 °C. A peak in growth rate was observed at intermediate temperatures between 570 and 700 °C.Keywords
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