The temperature-dependence of the energy band gap of CSVT-grown CdTe films determined by photoluminescence
- 14 July 1995
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 28 (7) , 1517-1520
- https://doi.org/10.1088/0022-3727/28/7/033
Abstract
Semiconducting films of CdTe grown by close-spaced vapour transport (CSVT) were studied by photoluminescence. One luminescence band located around 1.588 eV and labelled as /BE was observed at a temperature of T=10 K. Such a band was studied over a wide range of temperatures (10-300 K), and the mechanisms involved in it were identified. Both band-to-band (B-B) and excitonic (BE) recombination mechanisms are important at high temperatures (T>or=150 K), whereas at low temperatures the BE mechanism is the most important.Keywords
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