Reduced dislocation density in Ge/Si epilayers
- 27 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (21) , 2357-2359
- https://doi.org/10.1063/1.104870
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Rapid variation in epilayer threading dislocation density near x = 0·4 in GexSi1−xon (100) SiPhilosophical Magazine Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Combined effect of strained-layer superlattice and annealing in defects reduction in GaAs grown on Si substratesApplied Physics Letters, 1989
- Role of strained layer superlattices in misfit dislocation reduction in growth of epitaxial Ge0.5Si0.5 alloys on Si(100) substratesJournal of Applied Physics, 1989
- The Kinetics of Si1-xGex/Si Relaxation using Large Area Dislocation Imaging TechniquesMRS Proceedings, 1989
- I n s i t u observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructuresApplied Physics Letters, 1988
- Atomic structure of the GaAs/Si interfaceApplied Physics Letters, 1986