The Kinetics of Si1-xGex/Si Relaxation using Large Area Dislocation Imaging Techniques
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Photoluminescence studies of Si (100) doped with low-energy (≤1000 eV) As+ ions during molecular beam epitaxyApplied Physics Letters, 1989
- Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processingIEEE Electron Device Letters, 1989
- Dislocation nucleation and propagation in Si0.95Ge0.05 layers on siliconApplied Physics Letters, 1989
- Resonant tunneling in Si/Si1−xGex double-barrier structuresApplied Physics Letters, 1988
- Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxyIEEE Electron Device Letters, 1988
- Determination of the critical layer thickness of Si1−xGex/Si heterostructures by direct observation of misfit dislocationsApplied Physics Letters, 1988
- The Stability of Si-Si1-xGex Strained Layer Heterostructures.MRS Proceedings, 1988
- Characterization of MBE grown Si/GexSi1−x strained layer superlatticesJournal of Crystal Growth, 1987