Defect studies in electron-irradiated boron-doped silicon
- 20 February 1987
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 20 (5) , 645-650
- https://doi.org/10.1088/0022-3719/20/5/003
Abstract
DLTS and MCTS studies are reported for boron-doped (about 3.5*1015 cm-3) pulled silicon specimens which have been subjected to electron irradiation at 1.5 MeV at about 80 K. A number of previously reported and identified features are observed and two new peaks are reported, the first possibly dependent on oxygen content at an energy level of about Ev+0.13 eV and with a capture cross section of about 10-18 cm2, the second with a charge-dependent peak amplitude at an energy of Ev+0.34 eV-apparently a vacancy-dependent complex annealing out at around room temperature.Keywords
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