Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates
- 13 July 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (2) , 238-240
- https://doi.org/10.1063/1.121767
Abstract
The electrical characteristics of Ni and Ti Schottky barriers on n-Al0.15Ga0.85N on SiC were investigated. We report that the barrier height for Ni on n-Al0.15Ga0.85N was about 1.26 eV and about 1 eV or less for Ti. These barrier heights are about 0.3–0.4 eV larger than those for Ni and Ti on n-GaN, which are in good agreement with Schottky model predictions.Keywords
This publication has 12 references indexed in Scilit:
- Observation of quantum Hall effect in 2D-electron gas confined in GaN/GaAlN heterostructureMaterials Science and Engineering: B, 1997
- Optical and electrical properties of 2-dimensional electron gas in GaN/AlGaN heterostructuresMaterials Science and Engineering: B, 1997
- Thermally stable PtSi Schottky contact on n-GaNApplied Physics Letters, 1997
- Schottky barrier properties of various metals on n-type GaNSemiconductor Science and Technology, 1996
- High transconductance heterostructure field-effect transistors based on AlGaN/GaNApplied Physics Letters, 1996
- Hall measurements and contact resistance in doped GaN/AlGaN heterostructuresApplied Physics Letters, 1996
- MOVPE Growth of High Electron Mobility AlGaN/GaN HeterostructuresMRS Proceedings, 1995
- Electron mobilities in gallium, indium, and aluminum nitridesJournal of Applied Physics, 1994
- A note on the correlation between the Schottky-diode barrier height and the ideality factor as determined from I-V measurementsIEEE Electron Device Letters, 1983
- Attenuation Length Measurements of Hot Electrons in Metal FilmsPhysical Review B, 1962