Topics in solid phase epitaxy: Strain, structure and geometry
- 1 January 1996
- journal article
- review article
- Published by Elsevier in Materials Science and Engineering: R: Reports
- Vol. 16 (1) , 1-42
- https://doi.org/10.1016/0927-796x(96)80001-5
Abstract
No abstract availableThis publication has 148 references indexed in Scilit:
- The interplay of surface morphology and strain relief in surfactant mediated growth of Ge on Si(111)Surface Science, 1993
- Pressure-enhanced solid phase epitaxy of germaniumApplied Physics Letters, 1990
- A Critical Discussion of the Vacancy Diffusion Model of Ion Beam Induced Epitaxial CrystallizationPhysica Status Solidi (a), 1989
- Bragg diffraction by amorphous siliconNature, 1987
- Atomic structure of the epitaxial Al–Si interfacePhilosophical Magazine A, 1986
- Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffractionSurface Science, 1985
- Epitaxial regrowth of intrinsic, 31P-doped and compensated (31P+11B-doped) amorphous SiJournal of Applied Physics, 1982
- Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystalsSolid State Communications, 1977
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- The nature of barrier height variations in alloyed Al-Si Schottky barrier diodesSolid-State Electronics, 1975