Effect of temperature on M-O-S capacitances†
- 1 March 1972
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 32 (3) , 347-351
- https://doi.org/10.1080/00207217208938297
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Stability and surface charge in the MOS system†International Journal of Electronics, 1968
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Field Effect‐Capacitance Analysis of Surface States on SiliconPhysica Status Solidi (b), 1963
- An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodesSolid-State Electronics, 1962