Molecular beam epitaxy and characterization of Al x Ga1-x As y Sb1-y (0.0 ≤x ≤ 1.0) lattice matched to InAs substrates
- 1 September 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (9) , 989-993
- https://doi.org/10.1007/bf02652926
Abstract
No abstract availableKeywords
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