Resonant interband tunneling device with multiple negative differential resistance regions
- 1 March 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (3) , 110-112
- https://doi.org/10.1109/55.46950
Abstract
The first observations of multiple negative differential resistance (NDR) regions in resonant interband tunneling devices are reported. In vertically integrated poly-type heterostructures of InAs/AlSb/GaSb, the peak voltages are reduced by a factor of 2 compared to the AlInAs/GaInAs material system, while high peak-to-valley ratios of 4:1 (17:1) at 300 K (77 K) are maintained. The InAs/AlSb/GaSb material system offers advantages for circuit applications of such devices, particularly operation at lower voltages.Keywords
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