A triple-well resonant tunneling diode for multiple-valued logic application
- 1 August 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (8) , 365-367
- https://doi.org/10.1109/55.745
Abstract
A resonant tunneling diode with four potential barriers and three quantum wells was fabricated and applied to multiple-valued logic. The diode exhibited significant double negative resistance characteristics and operated as a triple stable device with a single voltage between 180 and 230 K.<>Keywords
This publication has 11 references indexed in Scilit:
- Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applicationsIEEE Electron Device Letters, 1987
- Quantum-well resonant tunneling bipolar transistor operating at room temperatureIEEE Electron Device Letters, 1986
- Observation of resonant tunneling in AlGaAs/GaAs triple barrier diodesApplied Physics Letters, 1986
- Variably spaced superlattice energy filter, a new device design concept for high-energy electron injectionApplied Physics Letters, 1986
- Resonant tunneling transistors with controllable negative differential resistancesIEEE Electron Device Letters, 1985
- A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)Japanese Journal of Applied Physics, 1985
- Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperatureApplied Physics Letters, 1985
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974
- Tunneling in a finite superlatticeApplied Physics Letters, 1973