Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications
- 31 May 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 201-202, 1069-1072
- https://doi.org/10.1016/s0022-0248(98)01524-3
Abstract
No abstract availableKeywords
Funding Information
- Japan Society for the Promotion of Science
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 6 references indexed in Scilit:
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- New semiconductors TlInGaP and their gas source MBE growthJournal of Crystal Growth, 1997
- Gas source molecular beam epitaxy growth of TlInP for new infrared optical devicesJournal of Applied Physics, 1997
- New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful GrowthJapanese Journal of Applied Physics, 1996
- InTlP — a proposed infrared detector materialApplied Physics Letters, 1994