Electrical activity of the first- and second-order twins and grain boundaries in silicon
- 15 January 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (2) , 435-438
- https://doi.org/10.1063/1.340259
Abstract
The structural and electrical properties of twins in polycrystalline silicon materials have been investigated by electron-beam-induced current and transmission electron microscopy. The electrical activity of the first- and second-order twins is related to segregation effects and to their structure, as described by geometrical models.This publication has 15 references indexed in Scilit:
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