A monolithic L-band limiting amplifier and dual-modulus prescaler GaAs integrated circuit
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 569-572
- https://doi.org/10.1109/mwsym.1988.22099
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- TiW nitride thermally stable Schottky contacts to GaAs: Characterization and application to self-aligned gate field-effect transistor fabricationJournal of Vacuum Science & Technology B, 1987
- Refractory self-aligned gate technology for GaAs microwave FETs and MMICSElectronics Letters, 1987