Shutter control method for control of Al contents in AlGaN quasi-ternary compounds grown by RF-MBE
- 15 June 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 189-190, 109-113
- https://doi.org/10.1016/s0022-0248(98)00182-1
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Small valence-band offsets at GaN/InGaN heterojunctionsApplied Physics Letters, 1997
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- First-principles calculations of effective-mass parameters of AlN and GaNPhysical Review B, 1995
- Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen SourceJapanese Journal of Applied Physics, 1995
- 600-nm wavelength range GaInP/AlInP quasi-quaternary compounds and lasers prepared by gas-source molecular-beam epitaxyJournal of Applied Physics, 1993