Degradation behavior in the remnant polarization of SrBi2Ta2O9 thin films by hydrogen annealing and its recovery by postannealing

26 July 1999

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 75 (4) , 558-560
https://doi.org/10.1063/1.124421

Abstract

The degradation behavior in the remnant polarization (Pr) of sol–gel-derived SrBi2Ta2O9 (SBT) thin films, with Pt top and bottom electrodes, by annealing under a 5% H2/95% N2 atmosphere is investigated. The hydrogen annealing is performed at temperatures ranging from 250 to 480 °C. By annealing, the Pr drops to almost zero for all temperatures. Postannealing at temperatures higher than 700 °C under an air atmosphere recovers the Pr. Interestingly, the recovery is most ineffective for the sample annealed at the Curie temperature of the SBT films. A phenomenological model that explains this anomalous recovery behavior is presented.

Keywords

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