Effect of Oxygen Exposure and Deposition Environment on Thermal Stability of Ta Barriers To Cu Penetration.
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
The effect of deposition pressure and controlled oxygen dosing on the diffusion barrier performance of thin film Ta to Cu penetration was investigated. In-situ resistivity, Auger compositional profiling, scanning electron microscopy and cross-sectional transmission electron microscopy were used to determine the electrical, chemical and structural changes that occur in Cu/Ta bilayers on Si upon heating. A 20 nm Ta barrier allowed the penetration of Cu at temperatures ranging from 320 to 630°C depending on processing conditions. Barrier failure temperature is dependent upon the deposition pressure and oxygen contamination at the Ta/Cu interface. This indicates the importance of understanding how deposition conditions affect diffusion barrier performance.Keywords
This publication has 5 references indexed in Scilit:
- Tantalum as a diffusion barrier between copper and siliconApplied Physics Letters, 1990
- Stability of amorphous IrTa diffusion barriers between Cu and SiMaterials Letters, 1990
- Reaction between Cu and TiSi2 across different barrier layersApplied Physics Letters, 1990
- Barrier behaviour of TiW between copper and aluminiumPhysica Status Solidi (a), 1988
- The crystal structure of η-Cu3Si precipitates in siliconActa Crystallographica Section A, 1978