High-Quality n-GaInAs Grown by OMVPE Using Si2H6 by High-Velocity Flow
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10R) , 1910
- https://doi.org/10.1143/jjap.29.1910
Abstract
High-quality n-GaInAs grown by OMVPE using Si2H6 is reported. The crystal quality was improved by high-velocity flow and was evaluated based on the sharp peak in X-ray diffraction measurement and large small-signal current gain of the hot electron transistor.Keywords
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