Meltback and pullover as causes of disturbances in liquid-phase epitaxial growth of InGaAsP/InP 1.3-μm laser material
- 1 October 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (10) , 6064-6067
- https://doi.org/10.1063/1.328544
Abstract
InGaAsP/InP 1.3-μm laser material grown by liquid-phase epitaxy occasionally exhibits an anomalous x-ray diffraction pattern and may also have a high threshold current density. The origin of this effect is shown to be the contamination of the normal p-type InP cladding layer with Ga and As. A typical composition of this quaternary cladding layer is determined, and secondary-ion mass-spectrometry analyses are used to show the contamination is most likely caused by pullover from the previous melt.This publication has 11 references indexed in Scilit:
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