InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE
- 1 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 184-188
- https://doi.org/10.1016/0022-0248(92)90388-y
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- 0.33- mu m gate-length millimeter-wave InP-channel HEMTs with high f/sub 1/ and f/sub max/IEEE Electron Device Letters, 1991
- Growth of high quality AlInAs by low pressure organometallic chemical vapor deposition for high speed and optoelectronic device applicationsJournal of Crystal Growth, 1991
- Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxyJournal of Applied Physics, 1991
- Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alaneApplied Physics Letters, 1990
- The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1984