The theory of the domain electrical instability in two-valley semiconductors
- 28 July 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (14) , 2633-2639
- https://doi.org/10.1088/0022-3719/10/14/015
Abstract
The electron trapping on the traps from the lower and the upper valleys is taken into account in the theory of the domain instability in GaAs. The current dependence on the electric field of the sample with the slow domains as well as the expression for the domain velocity are derived.Keywords
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