Selective dry etching of silicon with respect to germanium
- 9 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (15) , 1436-1438
- https://doi.org/10.1063/1.102490
Abstract
We describe a plasma-based dry etching procedure which permits selective etching of Si over Ge with a Si/Ge etch rate ratio of over 70 and negligible etching of the Ge underlayer. This is achieved in a SF6/H2/CF4 gas mixture by the formation of a thin (≂3 nm) involatile etch stop layer on the Ge surface which consists of Ge-sulfide and carbonaceous material.Keywords
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