NL10 defects formed in Czochralski silicon crystals

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Abstract
The electron spin resonance of defects formed in high-resistivity Czochralski silicon crystals annealed at 470 °C were observed. Defects with C2v symmetry in nitrogen in-diffused crystals annealed for less than about 50 h were observed. With annealing for more than about 50 h, new electron-spin-resonance (ESR) spectra made up of C2v and nearly isotropic defects were evident. Only nearly isotropic defects were observed in non-nitrogen-doped crystals. It is believed that defects with C2v symmetry are oxygen-nitrogen complexes. Strong similarities between oxygen-nitrogen complex and previously reported NL10, in terms of C2v symmetry, g values, the dependence of g values on annealing time, the temperatures at which complexes are formed, the absence of hyperfine interactions in ESR measurement, and the character of shallow energy levels suggest that they may be the same defect.