GaAs-based single electron logic and memory devices using electro-deposited nanometer Schottky gates
- 30 June 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 47 (1-4) , 285-287
- https://doi.org/10.1016/s0167-9317(99)00215-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Enhancement of Coulomb blockade in semiconductor tunnel junctionsApplied Physics Letters, 1995
- Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical ProcessJapanese Journal of Applied Physics, 1995