Doping of phosphorus in hydrogenated amorphous silicon by a neutron transmutation doping technique
- 1 October 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (7) , 786-788
- https://doi.org/10.1063/1.95366
Abstract
Doping of phosphorus in hydrogenated amorphous silicon (a‐Si:H) produced by rf glow discharge has been achieved by a neutron transmutation doping technique. Electrical and electron spin resonance measurements showed that the neutron irradiation damages have been recovered by the thermal annealing near the growth temperature of a‐Si:H films. After thermal annealing at 220 °C, the activation energies of 0.57 and 0.50 eV were obtained for transmuted phosphorus concentrations of 3.1×1012 and 1.6×1013/cm3, corresponding to neutron doses of 1.8×1016 and 9.0×1016 n/cm2, respectively.Keywords
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