Etching and Surface Modification of GaAs by Hydrogen Radicals Generated by Hydrogen Microwave Afterglow Method
- 1 April 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (4A) , L451
- https://doi.org/10.1143/jjap.35.l451
Abstract
We etched crystalline GaAs using hydrogen radicals generated by the hydrogen microwave afterglow method and determined the dependence of etching rate on substrate temperature, microwave power, and sample distance from the quartz tube supplying hydrogen radicals. From the Arrhenius plot, the activation energy was found to be 0.43 eV. The surface morphology could be varied from flat to textured by changing the etching conditions.Keywords
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