Digital etching of GaAs using Se molecular beam and atomic hydrogen beam
- 14 November 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (20) , 2585-2587
- https://doi.org/10.1063/1.112603
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Atomic hydrogen cleaning of GaAs and InP surfaces studied by photoemission spectroscopySurface Science, 1994
- Digital Etching Using KrF Excimer Laser: Approach to Atomic-Order-Controlled Etching by Photo Induced ReactionJapanese Journal of Applied Physics, 1993
- Self-limited layer-by-layer etching of Si by alternated chlorine adsorption and Ar+ ion irradiationApplied Physics Letters, 1993
- Photon-stimulated desorption from chemically treated Si surfacesSurface Science, 1993
- Surface chemical bonding of selenium-treated GaAs(111)A, (100), and (111)BPhysical Review B, 1992
- Reflection high-energy electron-diffraction and photoemission spectroscopy study of GaAs(001) surface modified by Se adsorptionPhysical Review B, 1992
- Evidence of Ga2Se3-Related Compounds on Se-Stabilized GaAs SurfacesJapanese Journal of Applied Physics, 1992
- Molecular layer etching of GaAsApplied Physics Letters, 1992
- Low-Temperature Cleaning of GaAs Substrate by Atomic Hydrogen IrradiationJapanese Journal of Applied Physics, 1991
- Digital etching of GaAs: New approach of dry etching to atomic ordered processingApplied Physics Letters, 1990