Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma-enhanced chemical vapor deposition
- 6 February 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (6) , 511-513
- https://doi.org/10.1063/1.100915
Abstract
Very low H content SiN films have been deposited by a multipolar plasma-enhanced deposition system at room temperature. The main plasma parameters which control the hydrogen and oxygen incorporation in the films have also been analyzed and optimized.Keywords
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