a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers
- 1 April 2002
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 299-302, 1234-1239
- https://doi.org/10.1016/s0022-3093(01)01144-9
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Mid-gap states measurements of low-level boron-doped a-Si:H filmsJournal of Non-Crystalline Solids, 2000
- Hydrogenated Amorphous Silicon Photodiode Technology for Advanced CMOS Active Pixel Sensor ImagersMRS Proceedings, 2000
- Reverse bias currents in amorphous silicon nip sensorsJournal of Non-Crystalline Solids, 1996
- Technology and Performance of TFA (Thin Film on ASIC-SensorsMRS Proceedings, 1994