Schottky Barrier Formation Between Polypyrrole and Crystalline and Amorphous Hydrogenated Silicon
- 1 June 1982
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. 25 (6A) , 863-867
- https://doi.org/10.1088/0031-8949/25/6a/053
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Stabilization of n‐Si Photoanodes to Surface Corrosion in Aqueous Electrolyte with a Thin Film of PolypyrroleJournal of the Electrochemical Society, 1981
- Stabilization of n-type silicon photoelectrodes to surface oxidation in aqueous electrolyte solution and mediation of oxidation reaction by surface-attached organic conducting polymerJournal of the American Chemical Society, 1981
- Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier DiodesJapanese Journal of Applied Physics, 1981
- Electron transport in hydrogenated amorphous silicon: drift mobility and junction capacitanceSolar Cells, 1980
- Protection of n ‐ GaAs Photoanodes with Photoelectrochemically Generated Polypyrrole FilmsJournal of the Electrochemical Society, 1980
- Internal photoemission in hydrogenated amorphous-Si filmsApplied Physics Letters, 1980
- Polypyrrole: An electrochemically synthesized conducting organic polymerSynthetic Metals, 1980
- Influence of preparation conditions on forward-bias currents of amorphous silicon Schottky diodesJournal of Applied Physics, 1979
- (SN)x-GaAs polymer-semiconductor solar cellsApplied Physics Letters, 1978
- Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitrideApplied Physics Letters, 1976