Single mode optical waveguides and phase shifters using InGaAlAs on InP grown by molecular beam epitaxy
- 8 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (2) , 103-104
- https://doi.org/10.1063/1.103045
Abstract
We have investigated the characteristics of molecular beam epitaxial In0.53 (Gax Al1−x )0.47 As/InP waveguides and phase modulators in the 1.15–1.3 μm wavelength range. Loss at 1.15 μm has been measured and is ∼5 dB/cm. The measured phase shift due to the electro-optic effect results in an electro-optic coefficient r63 ∼0.6×10−12 m/V. Preliminary results at 1.3 μm show that the loss is reduced and is ∼3.4 dB/cm.Keywords
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