Sulfur Doping in Al0.4Ga0.6As
- 15 March 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (6) , 434-436
- https://doi.org/10.1063/1.92387
Abstract
The incorporation of sulfur and measurements of its properties as a dopant in Al0.4Ga0.6As grown by liquid phase epitaxy at 780 °C are reported. Sulfur is readily incorporated, with a segregation coefficient of ∼100. However, sulfur creates deep centers in Al0.4Ga0.6As and produces low measured electron mobilities and increased nonradiative recombination. The unintentional incorporation of sulfur in (Al,Ga)As epillayers may result in the poor performance of devices due to compensation or type conversion of layers. The incorporation of sulfur in (Al,Ga)As can be reduced by interactions with the ambient gas during growth.Keywords
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