Stability as Regards Film Thickness, Homogeneity and Optical Properties of Thin a-Si:H Films
- 1 March 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (3R) , 341-346
- https://doi.org/10.1143/jjap.26.341
Abstract
The instability, or other words, the spontaneous changes in the properties of the material (ageing) that occur in thin a-Si:H films in the atmosphere in the long term have been determined as a function of the preparation parameters–pressure, power, gas flow rate and substrate temperature. The repeated monitoring of the material properties of the original films required the use of a non-destructive technique. The chosen technique encompassed the obtaining of transmission spectra of the film-substrate configuration and from this the film thickness, the homogeneity parameter Δd and the optical properties, n(λ), α(λ) and E 0 were obtained. Of the four preparation parameters that were varied, substrate temperature played a dominant role as regards the material properties and stability of these films. Experimental results of a number of films that were deposited at temperatures equal to, or lower than room temperature consistantly underwent the following changes in the long term: increases in film thickness and E 0, and decreases in the values of the parameters Δd, n(λ) and α(λ). The effect of ageing, as seen from the results, was not only restricted to the surface, but appeared throughout the whole thickness of the film.Keywords
This publication has 19 references indexed in Scilit:
- Photoelectric application of a-Si:H and related material-image devicesJournal of Non-Crystalline Solids, 1985
- Determining refractive index and thickness of thin films from wavelength measurements onlyJournal of the Optical Society of America A, 1985
- On the preparation dependence of the Staebler-Wronski effect in a-Si:HJournal of Non-Crystalline Solids, 1985
- Determination of surface roughness and optical constants of inhomogeneous amorphous silicon filmsJournal of Physics E: Scientific Instruments, 1984
- Recent advances in amorphous silicon solar cells and their technologiesJournal of Non-Crystalline Solids, 1983
- Determination of the thickness and optical constants of amorphous siliconJournal of Physics E: Scientific Instruments, 1983
- Spontaneous Inclusion of Oxygen in Sputter-Deposited Amorphous Silicon during and after FabricationJapanese Journal of Applied Physics, 1980
- Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated siliconSolar Energy Materials, 1979
- Defects in plasma-deposited a-Si: HJournal of Non-Crystalline Solids, 1979
- Substitutional doping in amorphous semiconductors the As-Si systemPhilosophical Magazine, 1976