A DC-to-100-GHz InP HEMT 1:2 distributor IC using distributed amplification
- 1 July 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 6 (7) , 256-258
- https://doi.org/10.1109/75.502285
Abstract
The authors describe a 1:2 distributor IC for future very-high-speed optical communication systems. Wideband performance is obtained by applying a distributed amplification technique to a differential circuit. This IC uses a 0.1-/spl mu/m-gate-length InAlAs-InGaAs-InP HEMT and coplanar waveguide technology. It has a 3-dB bandwidth of 100 GHz with a low frequency gain of -2.5 dB. Up to 100 GHz, return loss and isolation are better than -10 dB and -20 dB, respectively. The authors believe the bandwidth is the widest ever reported for multi-RF-port wideband IC's.Keywords
This publication has 5 references indexed in Scilit:
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