Effects of forming cavities on the lattice quality and carrier profile in the B doped silicon
- 1 March 2000
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 72 (2-3) , 142-145
- https://doi.org/10.1016/s0921-5107(99)00489-4
Abstract
No abstract availableKeywords
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