Cd Cl 2 treatment, S diffusion, and recombination in polycrystalline CdTe
- 15 May 2006
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 99 (10) , 103703
- https://doi.org/10.1063/1.2196127
Abstract
Time-resolved photoluminescence measurements on and structures indicate that the process, without any S present, significantly reduces recombination. However, S diffusion is required for lifetimes comparable to those observed in high-efficiency solar cells. Low-temperature photoluminescence, cathodoluminescence, and scanning electron images indicate how defect chemistry, grain-boundary passivation, and morphology are affected by S diffusion and the treatment.
This publication has 29 references indexed in Scilit:
- Comparison of device performance and measured transport parameters in widely-varying Cu(In,Ga) (Se,S) solar cellsProgress In Photovoltaics, 2005
- CdTe photoluminescence: Comparison of solar-cell material with surface-modified single crystalsApplied Physics Letters, 2005
- Analysis of charge separation dynamics in a semiconductor junctionPhysical Review B, 2005
- Changes in the dominant recombination mechanisms of polycrystalline Cu(In,Ga)Se2 occurring during growthJournal of Applied Physics, 2003
- Photoluminescence Characterisation of Ion Implanted CdTeMRS Proceedings, 2001
- Thin film CdTe-CdS heterojunction solar cells on lightweight metal substratesSolar Energy Materials and Solar Cells, 1999
- Investigation of polycrystalline CdTe thin films deposited by physical vapor deposition, close-spaced sublimation, and sputteringJournal of Vacuum Science & Technology A, 1995
- The Effect of Source Microstructure on the Close-Space Sublimation of CdTe Thin Films for Solar Cell ApplicationsMRS Proceedings, 1995
- Identification of the chlorineAcenter in CdTePhysical Review B, 1992
- Current transport mechanisms in epitaxial CdS/CdTe heterojunctionsJournal of Crystal Growth, 1990