CdTe photoluminescence: Comparison of solar-cell material with surface-modified single crystals
- 24 May 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (22)
- https://doi.org/10.1063/1.1935752
Abstract
Low-temperature photoluminescence (PL) is used to study defect evolution during Cu diffusion into single-crystal CdTe under various atmospheres. PL reveals a zero-order phonon peak at 1.456 eV when Cu-coated CdTe is annealed at 400 °C in an oxidizing atmosphere, but not under other tested conditions. A similar peak is seen in polycrystalline thin-film CdTe samples, which are known to contain copper and oxygen impurities. First-principles band structure calculations determined the likely defect assignment as a transition between a Cui–OTe donor complex and the valence band.Keywords
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