Remote plasma deposition of aluminum nitride
- 15 January 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (2) , 990-993
- https://doi.org/10.1063/1.348918
Abstract
Aluminum nitride thin films have been deposited from the addition of trimethyl aluminum in the afterglow of N2, N2:H2 microwave plasmas over a pressure range of 0.01–0.3 Torr. With N2 as the plasma gas at 0.3 Torr, strongly chemiluminescent reactions of N with CH3 lead to CN incorporation and resulting films are poor insulators. With N2:H2 as the plasma gas or for deposition at low pressures, chemiluminescence is extinguished and films with resistivities ≳1015 Ω cm can be deposited. It is proposed that the improvement results because the fast gas phase reactions between N and CH3 are avoided.This publication has 20 references indexed in Scilit:
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