Factors affecting the growth of aluminium nitride layers on sapphire by the reaction of nitrogen with aluminium monoselenide
- 1 January 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (1) , 23-33
- https://doi.org/10.1016/0022-0248(89)90598-8
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xNJournal of Electronic Materials, 1985
- Growth morphology and surface-acoustic-wave measurements of AIN films on sapphireJournal of Applied Physics, 1975
- Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinelJournal of Electronic Materials, 1973
- Epitaxially grown AlN and its optical band gapJournal of Applied Physics, 1973
- Evaluation of new single crystal piezoelectric materials for surface acoustic-wave applicationsUltrasonics, 1970
- On the preparation, optical properties and electrical behaviour of aluminium nitrideJournal of Physics and Chemistry of Solids, 1967
- DIRECT PIEZOELECTRIC COUPLING TO SURFACE ELASTIC WAVESApplied Physics Letters, 1965
- Das Verfahren zur Messung von Dampfdrucken nach Baur und Brunner Dampfdrucke von Zink, Selen und TellurAngewandte Chemie, 1959
- Beitrag zum System Aluminium–SelenZeitschrift für anorganische und allgemeine Chemie, 1954
- Monovalent aluminumJournal of Chemical Education, 1952