Energy loss of two-dimensional electron gas in GaAs-AlGaAs multiple quantum wells by screened electron-polar optic-phonon interaction
- 1 August 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3) , 264-266
- https://doi.org/10.1063/1.96430
Abstract
Experimental data on the variation of the rate of energy loss of two-dimensional electrons with electron temperature in GaAs-AlGaAs multiple quantum wells have been found to be substantially lower than the values calculated from available theory. We have modified the theory to include overlap function, degeneracy, and screening of electron-polar optic-phonon coupling. The Landau damping of the plasma by single particle excitations and coupling between phonons and plasma are, however, neglected. It is found that inclusion of overlap and screening leads to good agreement between theory and experiment.Keywords
This publication has 11 references indexed in Scilit:
- Hot electrons in modulation-doped GaAs-AlGaAs heterostructuresApplied Physics Letters, 1984
- Electric field induced heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructuresApplied Physics Letters, 1983
- The electron-phonon interaction in quasi-two-dimensional semiconductor quantum-well structuresJournal of Physics C: Solid State Physics, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Two-dimensional electron transport in semiconductor layers II: ScreeningJournal of Vacuum Science and Technology, 1981
- Two-dimensional electron transport in semiconductor layers. I. Phonon scatteringAnnals of Physics, 1981
- Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructuresSolid State Communications, 1980
- Phonon-assisted recombination and stimulated emission in quantum-well AlxGa1−xAs-GaAs heterostructuresJournal of Applied Physics, 1980
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- On the derivation of energy loss rate and momentum relaxation time for intervalley scattering of a degenerate electron gas in a semiconductorPhysics Letters A, 1978