An Efficient Numerical Algorithm for Simulation of MOS Capacitance
- 1 April 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 2 (2) , 111-116
- https://doi.org/10.1109/tcad.1983.1270027
Abstract
A new, computationally efficient method for the numerical evaluation of the equilibrium capacitance of one-dimensional MOS structures is presented. Capacitance-voltage (C-V) characteristics for arbitary impurity profiles and interface state distributions can be calculated for temperatures ranging from 50 K to 350 K. Examples of simulated C-V characteristics demonstrate the capability of the computer program MOSCAP using these techniques.Keywords
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