Monolithic Integration of Si and GaAs Devices

This publication has 15 references indexed in Scilit:

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  Applied Physics Letters, 1986
• Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate
  Applied Physics Letters, 1985
• Monolithic integration of GaAs/AlGaAs modulation-doped field-effect transistors and N-metal-oxide-semiconductor silicon circuits
  Applied Physics Letters, 1985
• AlGaAs/GaAs DH Lasers on Si Substrates Grown Using Super Lattice Buffer Layers by MOCVD
  Japanese Journal of Applied Physics, 1985
• High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy
  IEEE Electron Device Letters, 1985
• Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate
  Japanese Journal of Applied Physics, 1984
• Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
  Applied Physics Letters, 1984
• AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate
  Applied Physics Letters, 1984
• GaAs MESFET's fabricated on monolithic GaAs/Si substrates
  IEEE Electron Device Letters, 1984
• GaAs light-emitting diodes fabricated on Ge-coated Si substrates
  Applied Physics Letters, 1984