Reliability of MOS LSl circuits
- 1 January 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 62 (2) , 244-259
- https://doi.org/10.1109/proc.1974.9412
Abstract
MOS LSI circuits share many of the reliability problem associated with discrete semiconductors and medium-scale integrated circuits. However, because of the added complexity, larger chip size, and higher densities of MOS LSI circuits, different approaches are needed. A close working relationship between the designer, manufacturer, and user-the reliability triangle--is needed to generate the manufacturing controls, testing methods, and reliability assessment procedures and to optimize the performance and reliability of the MOS LSI circuits. Using this approach, the MOS LSI circuit, having more functions per external connection, can provide a more reliable system than one of equal complexity, based on discrete devices or less complex integrated circuits. Specific areas of reliability such as pattern sensitivity, manufacturing controls, assembly, packaging, and electrical testing have also been discussed.Keywords
This publication has 12 references indexed in Scilit:
- Failure Analysis of Oxide Defects8th Reliability Physics Symposium, 1973
- MOS/LSI Failure Analysis TechniquesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973
- A Procedure for the Evaluation and Failure Analysis of M.O.S. Memory Circuits using the Scanning Electron Microscope in Potential Contrast Mode8th Reliability Physics Symposium, 1972
- Modes of failure of MOS devicesMicroelectronics Reliability, 1971
- Operational testing of L.S.I. arrays by stroboscopic scanning electron microscopyMicroelectronics Reliability, 1971
- The Response of the Threshold Voltages of the Transistors in Simple MOS Circuits to Tests at Elevated Temperatures8th Reliability Physics Symposium, 1971
- Sodium Ion Drift through Phosphosilicate Glass-SiO[sub 2] FilmsJournal of the Electrochemical Society, 1971
- Failure mechanisms in large-scale integrated circuitsIEEE Transactions on Electron Devices, 1969
- Stabilization of MOS devicesSolid-State Electronics, 1967
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965